ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,372, issued on Oct. 27, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Row decoder circuit and corresponding method of... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,373, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program time in memory devices" was ... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,374, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Selection of an optimal single level cell programming schem... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,375, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and operating method thereof, a... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,376, issued on Oct. 27, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device and pre-charge method" was invent... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,377, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Enhanced independent bit scan mode for neighbor plan... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,378, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory configured to resume a suspended erase operation wit... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,379, issued on Oct. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices and program operations having ... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,380, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Managing erase fails due to single defective word li... और पढ़ें
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,381, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Program time improvement for NAND die with coarse bi... और पढ़ें